A. G. Taboada, J. M. Llorens, D. Alonso-Álvarez, B. Alén, A. Rivera, Y. González and J. M. Ripalda
IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain
The following article appeared in Physical Review B, 88, 085303 (2013)
On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes in the ground-state energy cannot merely be explained by a composition change upon Sb exposure but can be accounted for when the change in lateral size is taken into consideration. The Sb distribution inside the QDs produces distinctive changes in the density of states, particularly, in the separation between excitation shells. We find a 50% increase in the thermal escape activation energy compared with reference InAs quantum dots as well as an increment of the fundamental transition decay time with Sb incorporation. Furthermore, we find that Sb incorporation into quantum dots is strongly nonlinear with coverage, saturating at low doses. This suggests the existence of a solubility limit of the Sb incorporation into the quantum dots during growth.
© 2013 The American Physical Society.